Hydrogen in semiconductors
نویسندگان
چکیده
منابع مشابه
Hydrogen in oxide semiconductors
Matthew D. McCluskey, Marianne C. Tarun and Samuel T. Teklemichael Journal of Materials Research / Volume 27 / Issue 17 / 2012, pp 2190 2198 DOI: 10.1557/jmr.2012.137 Link to this article: http://journals.cambridge.org/abstract_S0884291412001379 How to cite this article: Matthew D. McCluskey, Marianne C. Tarun and Samuel T. Teklemichael (2012). Hydrogen in oxide semiconductors. Journal of Mat...
متن کاملHydrogen in compound semiconductors
Hydrogen can be inadvertently introduced at any of several steps in the fabrication of optoelectronic devices. The most common consequence of hydrogenation is the passivation of dopant impurities, which leads to a decrease in the electrical conductivity of the material. The most successfully applied experimental technique for directly determining the involvement of hydrogen has been infrared-ab...
متن کاملTheory of Hydrogen in Semiconductors
SUMMARY Hydrogen exhibits a number of distinct eeects in semiconductors. These include: the neutral-isation of shallow impurities; the removal of deep states which act as recombination centres; the catalytic enhancement of oxygen diiusion; the change in the electrical characteristics of transition metal impurities. The basic theoretical methods that have been used to investigate these are descr...
متن کاملHydrogen Local Vibrational Modes in Compound Semiconductors
Local vibrational mode (LVM) spectroscopy of hydrogen and deuterium in GaP, AlSb, ZnSe, and GaN has provided important information about the structures of dopanthydrogen complexes and their interaction with the host lattice. In GaN:Mg, for example, hydrogen binds to a host nitrogen which is adjacent to the magnesium acceptor. In GaP and ZnSe, it has been demonstrated that the temperature depend...
متن کاملAcceptor–hydrogen complexes in semiconductors under pressure
The structure of acceptor–hydrogen complexes is a subject of fundamental and technological interest. To probe the interactions between hydrogen, the acceptor, and the surrounding host atoms, hydrostatic pressure may be applied over a wide range. Using infrared spectroscopy at liquid-helium temperatures, we have observed carbon and carbon– hydrogen local vibrational mode (LVMs) in InP at hydrost...
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ژورنال
عنوان ژورنال: Bulletin of Materials Science
سال: 1996
ISSN: 0250-4707,0973-7669
DOI: 10.1007/bf02744787